Radiation-Induced Charge Trapping in Low-k Silsesquioxane-Based Intermetal Dielectric Films
نویسندگان
چکیده
Radiation-induced charge trapping has been studied in cured hydrogen silsesquioxane low dielectric constant films subjected to electric fields during the radiation process. Evidence is found for electric field-dependent negative charge trapping with a dose 47 variation. The possible origin of the negative charge trapping is discussed.
منابع مشابه
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